Orientation-patterned gallium phosphide for integrated nonlinear photonics

Konstantinos Pantzas (1) , Sylvain Combrie (2) , Yoan Léger (3) , Grégoire Beaudoin (1) , Luc Le Gratiet (1) , Abdel Mounaim Harouri (1) , Bruno Gerard (4) , Gilles Patriarche (1) , Isabelle Sagnes (1) , Arnaud Grisard (2)

1 C2N - Centre de Nanosciences et de Nanotechnologies
2 Thales Research and Technology [Palaiseau]
3 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
4 III-V Lab - Alcatel-Thales III-V Lab

Gallium phosphide has long held promise for integrated nonlinear photonics, owing to its high non-linear figure of merit, broad transparency and compatibility with silicon. The recent development of orientation patterning in gallium phosphide has now brought this promise within grasp. Current research efforts are focused on demonstrating and evaluating a variety of second and third-order non-linear processes on the platform, reducing optical losses, and investigating integration with Si.

Domains: Engineering Sciences [physics]

Konstantinos Pantzas, Sylvain Combrie, Yoan Léger, Grégoire Beaudoin, Luc Le Gratiet, et al.. Orientation-patterned gallium phosphide for integrated nonlinear photonics. Photoniques, 2023, 122, pp.64-69. ⟨10.1051/photon/202312264⟩. ⟨hal-04314963⟩