Yorktown Heights, Journal of applied physics Coden JAPIAU, vol.218, issue.2, pp.2002-2005 ,
Optics communications, ZaragozaEspagne, vol.8, issue.200 16, pp.1-7, 2001. ,
Forschungszentrum fur Elektronenmikroskopie, Fabeckstr. 36a, 14195. ,
of Appl. Phys. California Institute of Technology ,
Miroirs à onde évanescente pour atomes froids: rebonds élastiques et inélastiques) Elastic and inelastic evanescent-wave mirrors for cold atoms(Atom optics and interferometry ,
Institut d'Optique, UMR 8501 du CNRS, Bât. 503, Campus universitaire d'Orsay, 91403. ,
29 rue Jeanne Marvig France (1 aut.) Physical review. B, Condensed matter; ISSN 0163-1829; Coden PRBMDO; Etats-Unis; Da Strong exciton-photon coupling in an organic semiconductor, a95. Transmittance of subwavelength optical tunnel junctions GIRARD, 1998. ,
Applied physics letters, Coden APPLAB, vol.7, pp.42-00156 ,
17 rue des Martyrs, F-38054 Grenoble, France (1 aut); CEA-Leti ,
FIN-02631 Espoo, Finland Applied physics letters, Coden APPLAB, vol.69621, issue.132, pp.2003-2009 ,
Journal of sol-gel science and technology; ISSN 0928-0707; Pays-Bas, 9 ref. INIST-26574.354000107753940720 b20. Coulomb blockade in thin SOI nanodevices FRABOULET (D.); JEHL (X.); MARIOLLE (D.), pp.407-412, 2003. ,
17 rue des Martyrs, aut., 3 aut., 4 aut., 5 aut., 6 aut ,
); Massachusetts Institute of Technology, 10598. ,
Etats-Unis DEPARTEMENT BASE DE DONNEES Sciences Exactes et de l'Ingénieur -67 - (1 aut125x; Etats-Unis, IEEE transactions on nanotechnology Da, vol.1, issue.4, 2002. ,
118 p.; Bibl. dissem. INIST-16213.354000107462620000 b24. A carbon-nanotube-based nanorelay, SE-412 96 Goteborg, Sweden (1 aut., 2 aut., 3 aut.) Applied physics letters, pp.2003-2005, 2003. ,
Basic research, 14109 Berlin/Allemagne (1 aut., 2 aut., 3 aut., 4 aut.) Physica status solidi ,
Samsung Advanced Institute of Technology, P. O. Box, vol.111, pp.440-600 ,
); CSE Center, Samsung Advanced Institute of Technology Applied physics letters, Korea Coden APPLAB, vol.5, issue.7, pp.561-756 ,
OR 97124-6497/Etats-Unis (1 aut.) IEEE transactions on nanotechnology; ISSN 1536-125x; Etats-Unis, Da, vol.1, issue.1, 2002. ,
NJ 07974/Etats-Unis (1 aut.) IEEE transactions on nanotechnology; ISSN 1536-125x; Etats-Unis, Da, vol.1, issue.1, 2002. ,
Ibaraki 305-8501/Japon (1 aut., 2 aut.); Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Japon, pp.152-8551 ,
Ibaraki 305-8501/Japon (1 aut., 2 aut.); Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Japon, pp.152-8551 ,
Condensed matter; ISSN 0921-4526; Pays-Bas; Da, pp.107-114, 2002. ,
California 94523, pp.39-427 ,
Pp. 2984-2990 INIST-11992 B b35. Carbon nanotubes as potential building blocks for future nanoelectronics, 2002. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00648261
Pays-Bas (5 aut., 6 aut.) SPIE proceedings series; ISSN 1017-2653; Etats-Unis, Da, vol.4688, issue.1, pp.932-943, 1110. ,
SiGe electrical devices by atomic force microscopy oxidation BO (Xiang-Zheng), Haizhou ,
The Netherlands (1 aut, 2628. ,
4339; France; Da27-3.30; Bibl. 18 ref. INIST-125C.354000101968800060 b42. Nanoscale devices fabricated by dynamic ploughing with an atomic force microscope KUNZE (Ulrich), LORKE, vol.94, issue.3, p.44780, 2002. ,
Gerhard-Mercator-University/Duisburg/Allemagne (1 aut.) Superlattices and microstructures, Coden SUMIEK ,
Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da 61-62; Pp. 11-24; Bibl. 5 ref. INIST-20003.354000101686650010 b45. High-density selective placement methods for carbon, Arianna)Aline, 2002. ,
Applied physics letters; ISSN 0003-6951; Coden APPLAB; Etats-Unis; Da, pp.24061-0435 ,
Aichi 48-1192/Japon (4 aut.) Materials science & engineering C. Biomimetic and supramolecular systems; Pays-Bas ,
aut.); Università degli Studi di Catania, Dept. of Chemical Sciences Viale A ,
Allemagne (3 aut.); Toyota Central Research & Development Labs, Inc. Nagakute/Aichi 48-1192/Japon (4 aut.) Materials science & engineering C. Biomimetic and supramolecular systems; Pays-Bas, Münster, vol.10 ,
Coden SSELA5; Royaume-Uni; Da Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements LEGRAND, Bibl. 23 Refs. INIST-2888 b55, pp.997-1004, 2002. ,
CNRS UMR 8520, Department ISEN, Avenue H. Poincare, Cite Scientifique, F-59652 Villeneuve dAscq, France (1 aut., 2 aut., 3 aut.) Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena, Coden, vol.9 ,
Pp. 862-870 INIST-11992 B b56. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes WIND, 2002. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00648261
Box 218, Yorktown Heights, 10598 (1 aut., 2 aut., 3 aut., 4 aut ,
667-669 INIST-10020 b64. Logic gates and computation from assembled nanowire building blocks, Lincoln J, issue.4 ,
C.); ISSN 0036-8075; Coden SCIEAS; Etats-Unis; Da, Sciences Exactes et de l'Ingénieur -78 - b65. Logic circuits with carbon nanotube transistors BACHTOLD (Adrian); HADLEY (Peter); NAKANISHI (Takeshi), 2001. ,
Electron projection lithography : Progress on the electron column modules for SCALPEL high-throughput/alpha exposure tools STENKAMP, HERTFELDER (C.); KIENZIE (O.); ORCHOWSKI (A.), 2001. ,
7 ref. INIST-21760.354000097041730330 b67. Limits on silicon nanoelectronics for terascale integration : A computer science odyssey MEINDL ,
School of Electrical and Computer Engineering, Microelectronics Research Center, Georgia Institute of Technology ,
2001-11, pp.2520-2524 ,
Composants a Semiconduct, UMR CNRS ENSERG/38016 Grenoble Cedex DEPARTEMENT BASE DE DONNEES Sciences Exactes et de l'Ingénieur -79 ,
DEKKER (Cees) Department of Applied Physics and DIMES ,
Etudes Structurales-Centre National de la Recherche Scientifique, 29 rue J. Marvig/31055 Toulouse/France (1 aut.); IBM Research, Zurich Research Laboratory/8803 Rüschlikon/Suisse (2 aut.); IBM, 10598. ,
No. GUIDE; Pp. 122-125; Bibl. 2 ref. INIST-6090.354000091734030170 b81. Controlled deposition of carbon nanotubes on a patterned substrate, Da.J. P, 1995. ,
Heisenbergstrasse 1/70659 Stuttgart/Allemagne DEPARTEMENT BASE DE DONNEES Sciences Exactes et de l'Ingénieur -82 - (5 aut ,
Etats-Unis (1 aut.); département de chimie et au Centre des nanosciences de l'Université Rice ,
3 ref. INIST-18764.354000090631820090 b84 Electric-field assisted assembly and alignment of metallic nanowires SMITH (Peter A.); NORDQUIST ,
Etats-Unis (1 aut.); Naval Research Laboratory, Code 6300 Journal of superconductivity; ISSN 0896-1107; Etats-Unis, Overlook Ave. SW/Washington Da, vol.4, issue.13 2, pp.195-199, 2000. ,
3500 Deer Creek Road, MS 26U, 94304. (1 aut., 2 aut., 3 aut., 4 aut ,
17 Rue des Martyrs/38054 Grenoble/France (1 aut.) Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas, Da, 2000. ,
650 Harry Road); IBM Storage Systems Division, 5600 Cottle Road, Unis (1 aut., 2 autUnis (3 aut., 4 aut.) IBM journal of research and development ,
Yorktown Heights, aut., 2 aut., 3 aut., 4 aut ,
A, Physical; ISSN 0924-4247; Suisse, Da, vol.603, issue.1, pp.90-97, 1997. ,
9383; Coden IETDAI; Etats-Unis, Japon IEEE transactions on electron devices, vol.185 ,
physique solides/Orsay 91405/France (A11011000) Physical Review Letters; ISSN 0031-9007; Etats-Unis; Da, Bibl. 13 ref. CNRS-8895 c1. Nanotubes de carbone : état de l'art et perspectives : Les nanotechnologies. (Carbon nanotubes: state of the art and prospects, pp.2472-2475, 1988. ,
Nano letters : (Print); ISSN 1530-6984; Etats-Unis; Da, aut., 2 aut., 3 aut., 4 aut, pp.349-352, 2004. ,
29 ref. INIST-27369 ,
Bibl. 8 ref. INIST-16194A.354000113521100010 c4. High-performance P-type independent-gate, 14853/Etats-Unis (1 aut.) IEEE Electron Device Letters, pp.627-628, 2004. ,
); Center of Collaborative Research, The University of Tokyo, 4-6-1 Komaba, aut., 2 aut., 3 aut, pp.113-8656 ,
3152; Etats-Unis; Da 348-352; Bibl. 13 ref. INIST-Y 37924.354000117759970520 c7. Theoretical study of donor-spacer-acceptor structure molecule for stable molecular rectifier MIZUSEKI, ) Institute for Materials ResearchSendai 980-8577/Japon (1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut.); Novel Materials and Structural Chemistry Division, Bhabha Atomic Research Center, 2002. ,
19 ref. INIST-27369.354000119036560240 c9. Turning silicon on its edge NOWAK, E. J ,
2004-03-15 No. 3B; L418-L420 INIST-9959 c12. Nanowire crossbar arrays as address decoders for integrated nanosystems ZHAOHUI ZHONG; DELI WANG ,
ISSN 0036-8075; Coden SCIEAS; Etats-Unis; Da No. 5649; Pp. 1380-1382 INIST-6040.354000118824050190 c14. FET Fabricated by Layer-by, Unis (1 aut.) IEEE Transactions on Electron Devices, 2003. ,
2A; L210-L213 INIST-9959 c16. Extreme ultraviolet lithography based nanofabrication using a bilevel photoresist, No, vol.43 ,
2004-03, pp.781-784 ,
); Tokyo Institute of Tech ,
République de (8 aut.) IEEE International SOI conference/2002-10-07 ,
Coden SSELA5; Royaume-Uni; Da, 2004. ,
43 ref. INIST-27369.354000118763570130 c30. NanoCell electronic memories TOUR ,
Pp. 2869-2873 INIST-11992 B c32. Fabrication and characterization of a SiGe double quantum dot structure, 2003. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00648261
Resolution improvement for a maskless microion beam reduction lithography system JIANG (Ximan), 2003. ,
Pp. 2624-2631 INIST-11992 B c35. Formation of 3D InAs quantum dots on, 2003. ,
URL : https://hal.archives-ouvertes.fr/in2p3-00648261
); National Chiao Tung University, College of Electrical Engineering and Computer Science/Hsin9219; Coden IEEPAD; Etats-Unis, aut., 2 aut., 3 aut aut., 2 aut., 3 aut.) Proceedings of the IEEE. 53 ref. INIST-222.354000113378550030 c40. Extremely scaled silicon nano-CMOS devices LELAND CHANG; CHOI (Yang-Kyu), pp.1772-1784, 2003. ,
Faculté des Sciences Saint-Jérôme/13397 Marseille/France (3 aut.) Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da, 2003. ,
DALLAPORTA (Hervé); GAS (Patrick) CEA Grenoble-LETI, 17 Rue des Martyrs ,
Faculté des Sciences Saint-Jérôme/13397 Marseille/France (3 aut.) Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da, 2003. ,
IEEE transactions on electronics packaging manufacturing; ISSN 1521-334X; Coden ITEPFL; Etats-Unis; Da Device characteristics of sub-20 nm silicon nanotransistors SAHA (Samar); STARIKOV (Alexander) Silicon Storage Technology aut.) SPIE proceedings series, pp.172-179, 2003. ,
INIST-13880.354000114429940100 c49. Large area screen-printing cathode of CNT for ,
222 McNuit Hall/Xian Shaanxi Province 710049/Chine (1 aut., 2 aut., 3 aut., 4 aut.) Diamond and related materials, 2003. ,
Sciences Exactes et de l'Ingénieur -99 - 1449-1452 ,
Russian Academy of Sciences, 119991/Moscow/Russie (2 aut.); Lund University, Solvegatan 14 A/223 62 Lund/Suède (3 aut.); Institute of Radioengineering and Electronics, Russian Academy of Sciences/103907, Moscow/Russie (5 aut.); Institute of Chemistry and Chemical Technology Microelectronic engineering, N.S. Kurnakov Institute of General and Inorganic Chemistry National Academy of Sciences Coden MIENEF, 2003. ,
Pays-Bas (1 aut.) Journal of physics. D, Applied physics : (Print); ISSN 0022-3727; Coden JPAPBE; Royaume- Uni; Da, pp.289-308, 2003. ,
aut.) SPIE proceedings series, aut., 2 aut., 3 aut., 4 aut., 5 aut, pp.125-137, 2003. ,
Yorktown Heights, NY 10598-0218, Unis (1 aut., 2 aut., 3 aut., 4 aut., 5 aut ,
ISSN 0036-8075; Coden SCIEAS; Etats-Unis; Da No. 5620; Pp. 783-786 INIST-6040.354000118128990190 c62. Laying out circuits on asynchronous cellular arrays: a step towards feasible nanocomputers? PEPER (Ferdinand), JIA LEE; ADACHI (Susumu); MASHIKO (Shinro) Communications Research Laboratory, Nanotechnology Group, 588-2 Iwaoka, pp.651-2492, 2003. ,
Matériaux et Phénomènes Quantiques Université Paris 7 et CNRS, MPQ), pp.24-37 ,
56-62; Abs. anglais; Bibl. 19 ref. INIST-153 ,
40-48; Abs. anglais; Bibl. 3 ref. INIST-153 ,
Hyogo 651- 2492/Japon (3 aut.) Thin solid films, Coden THSFAP; Suisse; Da, pp.588-590, 2003. ,
Thin solid films; ISSN 0040-6090; Coden THSFAP; Suisse; Da 438-39; Pp. 360- 364; Bibl. 11 ref. INIST-13597.354000112705690680 c70. Hybrid silicon-organic nanoparticle memory, Japon, vol.588, pp.651-2492, 2003. ,
Greece (1 aut); Centre for Molecular and Nanoscale Electronics); Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi Zografou Greece Journal of applied physics Coden, vol.11, issue.10, pp.2003-2013, 15310. ,
35 ref. INIST-16002.354000111240630560 c72. From floating-gate non-volatile memories to silicon nano-crystal memories DE SALVO (Barbara) ,
VA 22203-1714/Etats-Unis (1 aut.); Strategic Analysis aut.) Proceedings of the IEEE; ISSN 0018-9219; Coden IEEPAD; Etats-Unis 44 ref. INIST-222.354000118218250050 c78. Giant magnetoresistive random-access memories based on current-in-plane devices KATTI, TREGER (Daryl M.) Solid State Electronics Center, pp.703-714, 2003. ,
Strategic Analysis9219; Coden IEEPAD; Etats-Unis; Da, 22201/Etats-Unis (2 aut.) Proceedings of the IEEE, pp.22203-1714, 2003. ,
Route de Gray Annales de la Fondation Louis de Broglie, pp.525-548, 2003. ,