Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates

Magdalena G. Nistor (1) , Nicolae Bogdan Mandache (1) , Jacques Perriére (2) , Christian Hébert (2) , Florin V. Gherendi (1) , Wilfried Seiler (3, 4)

1 INFLPR - National Institute for Lasers, Plasma, and Radiation Physics [Magurele-Ilfov]
2 INSP - Institut des Nanosciences de Paris
3 PIMM - Laboratoire Procédés et Ingénierie en Mécanique et Matériaux
4 LIM - Laboratoire d'Ingénierie des Matériaux

ZnO films have been grown on (100) oriented MgO substrates by pulsed-electron beam deposition in the room temperature to 500 °C range. Highly (00•2) textured films are obtained for a growth temperature higher than 200 °C, and epitaxial films are formed at 500 °C with the following epitaxial relationships: (1-1•0)ZnO // (110)MgO and (11•0)ZnO // (110)MgO, despite the difference in symmetry between film and substrate. The low temperature resistivity curves evidenced a metal-semiconductor transition for the ZnO films grown in the 300 to 500 °C range which has been interpreted in the frame of the model of conductivity in disordered oxides.

Mots clés: Epitaxial zinc oxide thin films; Pulsed-electron beam deposition; Metal-semiconductor transition; Channel-spark

Domaines: Matériaux

Magdalena G. Nistor, Nicolae Bogdan Mandache, Jacques Perriére, Christian Hébert, Florin V. Gherendi, et al.. Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates. Thin Solid Films, 2011, 519 (11), pp.3959-3964. ⟨10.1016/j.tsf.2011.01.266⟩. ⟨hal-02456504⟩