High temperature piezoelectric properties of flux-grown α-GeO 2 single crystal

Abstract : The temperature-dependence of the piezoelectric properties of trigonal -GeO2 single-crystals obtained by the high-temperature flux method was measured by the resonance technique of the electrical impedance in the 20°C-600°C range. To approach the values of the two independent piezoelectric coefficients d11 and d14, we first measured as a function of temperature the elastic coefficients S11, S14 and S66 and the dielectric permittivity 11 which are involved in the coupling coefficient k of both the thickness shear mode and the transverse mode. A Y-cut plate with a simple +45°-rotation ((YXtwl) +45°/0°/0°) was used to measure the coupling coefficient of the thickness shear mode, and two X-turned plates ((XYtwl) +45°/0°/0° and (XYtwl)-45°/0°/0°) were prepared to characterize the coupling coefficient of two transverse modes. From the whole experimental measurements, the piezoelectric coefficients of -GeO2 were calculated up to 600 °C. They show that this crystal is one of the most efficient in regard of the -quartz-like family at room temperature, and that its thermal comportment retains large piezoelectric properties up to 600°C.
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Philippe Papet, Micka Bah, Abel Haidoux, Benoit Ruffle, Bertrand Ménaert, et al.. High temperature piezoelectric properties of flux-grown α-GeO 2 single crystal. Journal of Applied Physics, American Institute of Physics, 2019, 126 (14), pp.144102. ⟨10.1063/1.5116026⟩. ⟨hal-02316058⟩

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