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Massless Dirac fermions in III-V semiconductor quantum wells

Abstract : We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the point of the Brillouin zone. Analysis of experimental data within an analytical Dirac-like Hamiltonian allows us not only to determine the velocity (v F = 1.8 × 10 5 m/s) of massless Dirac fermions, but also to demonstrate a significant nonlinear dispersion at high energies.
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Submitted on : Monday, April 8, 2019 - 1:50:28 PM
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Krishtopenko S.,PhysRevB.99.12...
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S. Krishtopenko, W. Desrat, K. Spirin, C. Consejo, S. Ruffenach, et al.. Massless Dirac fermions in III-V semiconductor quantum wells. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩. ⟨hal-02072785⟩



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