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Optoelectronic properties of hexagonal boron nitride

Guillaume Cassabois 1, *
* Corresponding author
Abstract : I will discuss here our results on phonon-assisted recombination in hBN, from bulk crystals to few-layer samples. First, I will focus on hBN crystals where the combination of isotopic purification, Raman scattering and polarized-resolved photoluminescence allowed us to identify the different phonon modes involved in the efficient phonon-assisted recombination in bulk hBN. In a second part, I will discuss photoluminescence experiments in epilayers grown by high-temperature molecular beam epitaxy. These epilayers have a thickness of few monolayers of hBN, and I will show that phonon-assisted recombination displays a distinct phenomenology with a PL spectrum different from the one of bulk crystals.
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https://hal.archives-ouvertes.fr/cel-02289713
Contributor : L2c Aigle <>
Submitted on : Tuesday, September 17, 2019 - 9:45:19 AM
Last modification on : Tuesday, November 5, 2019 - 5:14:40 PM
Document(s) archivé(s) le : Saturday, February 8, 2020 - 4:51:49 PM

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  • HAL Id : cel-02289713, version 1

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Guillaume Cassabois. Optoelectronic properties of hexagonal boron nitride. École thématique. Russia. 2019. ⟨cel-02289713⟩

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